After this work has been published by the Intech, authors have the right to republish it, in whole or part, in any publication of which they are an author or editor, and the make other personal use of the work. Publisher assumes no responsibility liability for any damage or injury to persons or property arising out of the use of any materials, instructions, methods or ideas contained inside. No responsibility is accepted for the accuracy of information contained in the published articles. Statements and opinions expressed in the chapters are these of the individual contributors and not necessarily those of the editors or publisher. Finally, the roadmap of the solar cell efficiency for an industrial PERC technology up to 24% is presented, with the aim of providing a potential guideline for industrial researchers.Intech Olajnica 19/2, 32000 Vukovar, Croatia Abstracting and non-profit use of the material is permitted with credit to the source. The data include: i) PC2D simulations on J 02, ii) the calculation of series resistance and back surface recombination velocity (BSRV) on the rear side metallization of PERC cell for the case of a point contact, and iii) the PC1D simulation on the cumulative photo-generation and recombination along the distance from the front surface. Aside from the information already presented in Huang et al., 2017, here we provide data related to Sectin 3 in Huang et al., 2017 concerning the analysis of the recombination losses׳ mechanisms by PC1D V5.9 and PC2D simulations (Clugston and Basore, 1997, Basore and Cabanas-Holmen, 2011, Cabanas-Holmen and Basore, 2012 and Cabanas-Holmen and Basore, 2012.), ,, on our current industrial Al 2O 3 PERC cell.
This data article is related to our recently published article (‘20.8% industrial PERC solar cell: ALD Al 2O 3 rear surface passivation, efficiency loss mechanisms analysis and roadmap to 24%’, Huang et al., 2017 ) where we have presented a systematic evaluation of the overall cell processing and a cost-efficient industrial roadmap for PERC cells.
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